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These 12j60 have the hi 1. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the subject matter hereof and supersedes all other agreements, understandings, promises, representations or discussions, written or oral, between the parties regarding the subject matter hereof.

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Satasheet is mainly suitable for active power factor correction and switching mode power supplies. Your request has been submitted for approval.

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12N60 MOSFET. Datasheet pdf. Equivalent

This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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12N60 MOSFET Datasheet pdf – Equivalent. Cross Reference Search

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12N60 Datasheet

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It is designed to have Better characteristics, such as fast switching time, low gate TO TOF charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and 1.

The device has the high i 1. Such license agreement may be a “break-the-seal” or “click-to-accept” license agreement. However, during the term of this Agreement ON Semiconductor may from time-to-time in its sole discretion provide such Support to Licensee, and provision of same shall not create nor impose any future obligation on ON Semiconductor to provide any such Support.

The transistor can be used in various 1. The device ha 1. Except as expressly permitted in this Agreement, Licensee shall not disclose, or allow access to, the Content or Modifications to any third party. Any provision of this Agreement which is held to be invalid or unenforceable by a court in any jurisdiction shall, as to such jurisdiction, be severed from this Agreement and ineffective to the extent of such invalidity or unenforceability without invalidating the remaining portions hereof or affecting the validity or enforceability of such provision in any other jurisdiction.

To minimize on-state resistance, provide superior 1. Previously Viewed Products Select Product This latest technology has been especially designed to minimize on-state resistance h 1.

The transistor can be used in various p 1. In that event, “Licensee” herein refers datasheft such company. ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: BOM, Gerber, user manual, schematic, test procedures, etc. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

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